centrotherm photovoltaics provides its customers with the full range of engineering, technology, equipment and services to manufacture polysilicon, ingots, bricks and wafers.
Our product portfolio covers CVD reactors and STC-TCS converters all the way through to vent gas recovery systems for high-purity polysilicon production. These proven technologies and efficient processes ensure excellent product quality, a high degree of silicon purity and high production capacity.
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Our core business is the development and sales of turnkey production lines for the manufacture of crystalline solar cells and modules, including the full range of engineering and technological process services. We supply our customers with diffusion furnaces, PECVD systems, drying and fast firing furnaces as well as laser process tools as key equipment.
We integrate our improvements in solar cell development, designed as technology and equipment upgrades into existing production lines. This enables our customers to meet increasing market and capacity demands and to deploy state-of-the-art production technology over the long-term.
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In the field of thin film technology, our portfolio covers the development and sales of production equipment and process technology for the manufacture of CIGS modules.
Our product portfolio includes vacuum plasma coating systems for sputtering molybdenum, copper, indium, gallium and zincoxide as well as proprietary selenization systems for atmospheric deposition and thermal conversion to CIGS.
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We develop and produce high-tech production systems for the manufacture of a wide range of semiconductor components. They are used in a wide range of thermally-activated processes in various technologies and applications (e.g. power semiconductors, LEDs, micromechanics, MEMS, sensor technology).
Our product portfolio includes horizontal and vertical furnaces and vacuum soldering furnaces. We supply systems for standard processes, with temperatures ranging from 300°C to 1,100°C, as well as systems for high-temperature processes of up to 1,250°C (Si-technologies) and up to 1,850°C (SiC technologies).
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