Inline PECVD system
Throughput-optimized inline system for nitride deposition in c-Si solar cell processing
For c.NITE Inline we have combined the advantages of our established batch-PECVD systems with an innovative inline-technology.
The direct LF plasma deposition offers superior passivation properties and film density. This results in an absolute higher cell efficiency for multi-crystalline wafers of typically 0.2% compared to other technologies on the market since there is no loss of layer quality as typically seen using ultra-fast growth rates.
The technology is designed for flexible deposition of double, multiple or graded AR coatings and is thus market-wide unique with respect to inline systems. The flexible pre-plasma operation for wafer surface conditioning sustainably improves surface properties and avoids blistering. The well-proven centrotherm direct plasma deposition does not require periodical downtime for chamber cleaning and thus allows the best possible uptime of typically >95%.
c.NITE Inline is designed with separate load locks and heating chamber and grants high duty cycle and maximized productivity of the plasma chamber.
- 3 or 4 chamber inline system (heating, 1 or 2 PECVD process chambers, cooling)
- 2 conveyors for vertical graphite boats
- Significantly increased throughput
- Field proven centrotherm PECVD direct plasma technology
- No periodical downtime and no particle contamination in the facility from chamber cleaning
- Long continuous operation comparable to batch-type systems
- Low CoO and Capex
- Small footprint
Processes
