c.OXIDATOR 150 High-Temperature SiC Furnace
c.OXIDATOR 150 Operating Panel with Touchscreen
Silicon Carbide Wafer

High-temperature oxidation furnace

c.OXIDATOR 150 is a high-temperature furnace, especially designed for the oxidation of silicon carbide (SiC) by centrotherm.

Its capability to run high process temperatures of up to 1380°C and oxidation processes using O2, N2O, NO, NO2 or WetOx atmosphere makes for an excellent combination of flexibility and proven process quality.

Equipped with metal-free heating and double vacuum, c.OXIDATOR 150 is currently the safest ToxGas oxidation furnace on the market.


  • Batch processing of 2“, 3“, 100 mm and 150 mm wafers or any combination
  • Maximum heating rate up to 7.5 K/min
  • Batch size up to 50 (150 mm) wafers
  • Process pressure range from 850 mbar to atmospheric pressure


  • Oxidation